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Your search returned 29 records. Click on the hyperlinks to view further details of Titles.. |
Magazine Name : Ieee Transactions On Electron Devices
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Year : 2000 Volume number : 47 Issue: 04 |
A Simple Yet Comprehensive Unified Physical Model Of The Donor Layer Electrons In Delta-Doped And Uniformly Doped Hemt'S
(Article)
Subject:
Analytic Model
,
Charge Control
,
Donor-Like Electron Trap States
Author:
Shreepad
Karmalkar
R.K.
Rao
page:
667
-
676
Relation Between Low-Frequency Noise And Long-Term Reliability Of Single Algaas/Gaas Power Hbt'S
(Article)
Subject:
Relationship
,
Noise
,
Long Term Change
Author:
Saeed Seif
Mohammadi
Dimitris
Pavlidis
Burhan
Bayraktaroglu
page:
677
-
686
High Temperature Performance Of Nmos Integrated Inverters And Ring Oscillators In 6h-Sic
(Article)
Subject:
Harsh Environment
,
High Temperature
,
Nmos Technology
Author:
U
Schmid
Scott T.
Sheppard
W
Wondrak
page:
687
-
691
High Coltage Gan Schottky Rectifiers
(Article)
Subject:
Gan
,
Power Electronics
,
Rectifiers
Author:
Chinh
Dang
Fuji
Ren
Robert
Wilson
page:
692
-
696
Tunnel Magnetoresistance Devices Processed By Oxidation In Air And Uv Assisted Oxidation In Oxygen
(Article)
Subject:
Ferromagnets
,
Tunnel Diode
,
Mram
Author:
Emad
Girgis
P.
Gruenberg
H.
Kohistedt
page:
697
-
701
A High-Speed Capacitive Humidity Sensor With On-Chip Thermal Reset
(Article)
Subject:
Capacitance Tranducers
,
Humidity Transducers
,
Polymicitic Lake
Author:
Uksong
Kang
Kensall D.
Wise
page:
702
-
710
Double Sided Minority Carrier Collection In Silicon Solar Cells
(Article)
Subject:
Minority-Carrier Generation Lifetime
,
Solar
Author:
Emmanuel Van
Kerschaver
Christoph
Zechner
Jochen
Dicker
page:
711
-
717
Explaining The Dependences Of The Hole And Electron Mobilities In Si Inversion Layers
(Article)
Subject:
Charge Carrier Mobility
,
Semiconducters
,
Mosfets
Author:
Agostino
Pirovano
Andrea L.
Lacaita
Ralph
Oberhuber
page:
718
-
724
A Closed-Form Back-Gate-Bias Related Inverse Narrow-Channel Effect Model For Deep-Submicron Vlsi Cmos Devices Using Shallow Trench Isolation
(Article)
Subject:
Sti
,
Conformal Mapping
,
Inverse Narrowchannel Effect
Author:
Shih-Chieh
Lin
James B.
Kuo
Shih-Wei
Sun
page:
725
-
733
A Four-Step Method Foe De-Embedding Gigahertz On-Wafer Cmos Measurements
(Article)
Subject:
Calibration
,
Cmos Analog Circuits
,
Microwave Measurements
Author:
Troels Emil
Kolding
page:
734
-
740
Dielectric Breakdown Mechanism Of Thin-Sio2 Studied By The Post-Breakdown Resistance Statistics
(Article)
Subject:
Mos Device
,
Dielectric Breakdown
,
Reliability
,
Resistance
Author:
Hideki
Satake
Akira
Toriumi
page:
741
-
745
Effect Of Physical Stress On The Degradation Of Thin Sio2 Films Under Electrical Stress
(Article)
Subject:
Bond Breaker Layer
,
Ftir
,
Oxide Breakdown
,
Ultrathin Oxide
Author:
Tien-Chun
Yang
Krishna C.
Saraswat
page:
746
-
755
New Channelengineering For Sub-100 Nm Mos Devices Considering Both Carrier Velocity Overshoot And Statistical Performance Fluctuations
(Article)
Subject:
Carrier Phase
,
Mosfet
,
Performance Function
,
Soi
Author:
Tomohisa
Mizuno
page:
756
-
767
Characterization Of Shallow Silicided Junctions For Sub-Quartr Micron Ulsi Technology Extration Of Silicidation Inuuced Schottky Contact Area
(Article)
Subject:
Poole-Frenkel Barrier Lowering
Author:
D
Lee
page:
762
-
-
Characterization Of Shallow Silicided Junctions For Sub-Quarter Micron Ulsi Technology Extraction Of Silicidaton Induced Schottky Contact Area
(Article)
Subject:
Poole Frenkel Barrier Lowering
,
Schottky Contacts
,
Shallow Junctions
Author:
Hi-Deok
Lee
page:
762
-
767
A Pysical Thermal Noise Model For Soi Mosfet
(Article)
Subject:
Poole Frenkel Barrier Lowering
,
Shallow Junctions
,
Salicide
Author:
Hi-Deok
Lee
page:
768
-
773
A Physical Thermal Noise Model For Soi Mosfet
(Article)
Subject:
Carrier Temperature
,
Lattice Temperature
,
Mosfet Modeling
,
Thermal Neutral Condition
Author:
Wei
Jin
Philip C. H.
Chan
Jack
Lau
page:
768
-
773
Theoretical Study Of Deep-Trap-Assisted Anomalous Currents In Worst-Bit Cells Of Dynamic Random-Access Memories (Dram'S)
(Article)
Subject:
Data Retention
,
Deep-Trap Assisted Current
,
Dram
Author:
Ken
Yamaguchi
page:
774
-
780
Fram Cell Design With High Immunity To Fatigue And Imprint For 0.5 3v Itici Mbit Fram
(Article)
Subject:
Fatigue
,
Fram
,
Imprinting
Author:
Sumio
Tanaka
Ryu
Ogiwara
Keiichi
Kamata
page:
781
-
788
Device Scaling Effects On Hot-Carrier Induced Interface And Oxide-Trapped Charge Ditributions In Mosfet'S
(Article)
Subject:
Channel Length Modulation
,
Spatial Practice
,
Mosfet
Author:
S.
Mahapatra
Chetan D.
Parikh
R. M. V. G. K.
Rao
page:
789
-
796
An Electrical Method For Measuring The Difference In Bandgap Across The Neutral Base In Sige Hbt'S
(Article)
Subject:
Bandgap
,
Bipolar
,
Sige Hbt
Author:
Yue T
Tang
J. S.
Hamel
page:
797
-
804
Polysilicon Gate Enhancement Of The Random Dopant Induced Threshold Voltage Fluctuations In Sub-100 Nm Mosfet'S With Ultrathin Gate Oxide
(Article)
Subject:
Doping Fluctuations
,
Mosfet
,
Semiconductor Device Simulation
,
Thresholds
Author:
Asen
Asenov
Subbash
Saini
page:
805
-
812
Design Optimization Of High-Performance Low-Temperature Mosfet'S With Low Impurity Density Channels At Supply Voltage Below I V
(Article)
Subject:
Cryogenic Electronics
,
Design Methods
,
Low Power Electronics
Author:
Jun
Xu
Ming-C
Cheng
page:
813
-
821
Isolation Edge Effect Depending On Gate Length Ofmisfet'S With Various Isolation Structures
(Article)
Subject:
Isolation
,
Locos Oxidation
,
Mixing Efficiency
,
Sti
Author:
Toshoiyuki
Oishi
Ken
Shiozawa
Y
Abe
page:
822
-
827
Trading Off Programming Speed And Current Absorption In Flash Memories With The Ramped Gate Programming Technique
(Article)
Subject:
Programming
,
Current
,
Flash
Author:
David
Esseni
Bruno
Ricco
S.
Tassan
page:
828
-
834
Gate Length Scalability Of N-Mosfet'S Down To 30 Nm Comparison Between Ldd And Non-Ldd Structures
(Article)
Subject:
Ldd Mosfet
,
Short-Channel Effects
,
Sub-0.1-/M Gate
Author:
Eiichi
Murakami
Tohiyuki
Yoshimura
page:
835
-
840
New Self-Adjusted Dynamic Source Multilevel P-Channel Flash Memory
(Article)
Subject:
Constant Current
,
Eeprom
,
Multilevel Cell
Author:
Rui
Lin
Tee-Chin
Chang
Chaug-Liang
Hsu
page:
841
-
847
High-Performance Deep Submicron Cmos Technologies With Polycrystalline-Sige Gates
(Article)
Subject:
Cmosfets
,
Mos Device
Author:
Youri V.
Ponomarev
Peter A.
Stolk
Cora
Salm
page:
848
-
855
Transistor Characteristics Of 14-Nm-Gate-Length Ej-Mosfet'S
(Article)
Subject:
Ej-Mosfet
,
Ultrashallow Source//Drain
Author:
Hisao
Kawaura
Toshio
Baba
Junichi
Sone
page:
856
-
860
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